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| SI4362DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V ID (A) 20 19 D TrenchFETr Power MOSFET D Optimized for "Low Side" Synchronous Rectifier Operation D 100% Rg Tested APPLICATIONS D DC/DC Converters D Synchronous Rectifiers SO-8 D S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G Ordering Information: SI4362DY SI4362DY-T1 (with Tape and Reel) SI4362DY--E3 (Lead Free) SI4362DY-T1--E3 (Lead Free with Tape and Reel) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limits 30 "12 20 15 60 2.9 3.5 2.2 -55 to 150 Unit A W THERMAL RESISTANCE RATINGSa Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board, t v 10 sec Document Number: 71628 S-40762--Rev. E, 19-Apr-04 www.vishay.com Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit _C/W 1 SI4362DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 19 A VDS = 15 V, ID = 20 A IS = 2.9 A, VGS = 0 V 30 0.0035 0.0042 90 0.75 1.1 0.0045 0.0055 0.6 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 20 A 42 12.8 7.7 1.3 17 14 158 43 50 2.2 30 25 230 65 80 ns W 55 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 3 V 50 40 30 20 10 0 0 2 4 6 8 10 2V 50 40 30 20 60 Transfer Characteristics I D - Drain Current (A) I D - Drain Current (A) TC = 125_C 10 0 0.0 25_C -55_C 1.5 2.0 2.5 3.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71628 S-40762--Rev. E, 19-Apr-04 2 SI4362DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.010 On-Resistance vs. Drain Current 8000 Capacitance r DS(on) - On-Resistance ( W ) 0.008 C - Capacitance (pF) 6000 Ciss 0.006 VGS = 4.5 V 0.004 VGS = 10 V 0.002 4000 2000 Coss Crss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 20 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A 4 1.4 rDS(on) - On-Resiistance (Normalized) 3 1.2 2 1.0 1 0.8 0 0 10 20 30 40 50 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.025 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.020 I S - Source Current (A) 0.015 TJ = 25_C 0.010 ID = 20 A 0.005 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 71628 S-40762--Rev. E, 19-Apr-04 0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 SI4362DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) -0.0 Power (W) -0.2 -0.4 -0.6 -0.8 -50 ID = 250 mA 60 50 Single Pulse Power 40 30 20 10 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 67_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71628 S-40762--Rev. E, 19-Apr-04 |
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